| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
304,000 pcs
|
304000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor NSBA113EF3T5G is a PNP type digital transistor featuring a monolithic bias resistor network. This integrated design simplifies circuit construction and reduces board space by replacing discrete components. It offers a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA.
The device includes integrated resistors with a nominal value of 1 kΩ for both the series base resistor (R1) and the base-emitter resistor (R2). The saturation voltage (Vce Sat) is a maximum of 250mV at 5mA base current and 10mA collector current. The minimum DC current gain (hFE) is 3 at 5mA collector current and 10V collector-emitter voltage. The power dissipation is rated at 254mW.
This transistor is supplied in a SOT-1123 surface-mount package. It is designed to replace single transistors and their external bias resistor networks, contributing to reduced component count and system cost. The device is Pb-free, halogen-free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 50V.
The maximum collector current (Ic) is 100mA.
It uses the SOT-1123 surface mount package.
Yes, it is RoHS3 compliant.
Yes, it is Pb-Free.
The maximum power dissipation is 254mW.