| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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108,000 pcs
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108000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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The NSB4904DW1T1G from ON Semiconductor is a dual bias resistor transistor (BRT) featuring complementary NPN and PNP silicon transistors with integrated monolithic bias networks. This device is designed to simplify circuit design and reduce board space by replacing a single transistor and its external resistor bias network.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It has a typical input resistance of 47kΩ and a typical DC current gain (hFE) of 80 at 5mA and 10V. The Vce saturation is a maximum of 250mV at 300µA and 10mA.
This transistor array is housed in a compact SC-88/SC70-6/SOT-363 surface mount package, making it ideal for low-power applications where board space is limited. The operating temperature range is from -55°C to +150°C. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Designed for ease of use, the NSB4904DW1T1G simplifies component count and circuit design. It is suitable for various low-power surface mount applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSB4904DW1T1G is 50 Vdc.
The continuous collector current (IC) rating is 100 mAdc.
The typical input resistance is 47 kΩ.
The operating temperature range is -55°C to +150°C.
The NSB4904DW1T1G is supplied in an SC-88/SC70-6/SOT-363 surface mount package.
Yes, the NSB4904DW1T1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.