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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NRTS1260PFST3G is a Schottky rectifier diode from On Semiconductor designed for high-efficiency power conversion. It features a maximum average rectified current of 12 A and a low forward voltage drop of 660 mV at 12 A, which helps reduce power dissipation. The device is specified for operation over a junction temperature range of -55°C to 175°C.
This diode is packaged in a TO-277 (3-PowerDFN) surface-mount case, also known as TO-277-3, which offers a compact footprint for space-constrained designs. The junction capacitance is 1180 pF at 1 V and 1 MHz, typical for a 12 A Schottky device.
Typical applications include output rectification in switch-mode power supplies, freewheeling diodes, and polarity protection circuits where low forward voltage and fast switching are required. The part is marked as RoHS3 compliant and REACH unaffected, though these compliance claims are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.68 | $1.68 |
| 10+ | $1.07 | $1.07 |
| 100+ | $0.71 | $0.71 |
| 500+ | $0.56 | $0.56 |
| 1,000+ | $0.47 | $0.47 |
| 5,000+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum average rectified current is 12 A.
The maximum forward voltage is 660 mV at 12 A.
It is housed in a TO-277 (3-PowerDFN) surface-mount package, also known as TO-277-3.
The operating junction temperature range is -55°C to 175°C.
The nominal junction capacitance is 1180 pF at 1 V and 1 MHz.