| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
959 pcs
|
959 pcs | On Request | 1 | On Request | On Request | 1434+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Renesas NP89N04PUK-E1-AY is an N-Channel MOSFET with a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 90A at 25°C (Tc). It offers a low on-resistance (Rds On) of 2.95mOhm at 45A and 5V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 4V at 250µA.
This MOSFET operates at temperatures up to 175°C (TJ) and has a maximum power dissipation of 1.8W (Ta) or 147W (Tc). The input capacitance (Ciss) is 5850 pF at 25V, and the gate charge (Qg) is 102 nC at 10V. The maximum gate-source voltage (Vgs) is ±20V.
Packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, the NP89N04PUK-E1-AY is designed for surface mounting. Its technology is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The continuous drain current (Id) is 90A at 25°C (Tc).
The maximum on-resistance (Rds On) is 2.95mOhm at 45A and 5V.
The operating temperature range is up to 175°C (TJ).
It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package for surface mounting.