| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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780 pcs
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780 pcs | On Request | 1 | On Request | On Request | 1603+ | On Request | On Request |
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The Renesas NP82N10PUF-E1-AY is an N-channel MOS Field Effect Transistor engineered for demanding high current switching applications. This MOSFET boasts a high drain-source voltage rating of 100V and can handle a continuous drain current of up to 82A at 25°C case temperature.
Key electrical characteristics include a low on-state resistance of 15 mΩ maximum at 41A and 10V gate-source voltage, contributing to efficient power handling. The input capacitance (Ciss) is typically 2900 pF. Switching performance is supported by a typical turn-on delay time of 16 ns and a fall time of 8 ns.
Packaged in a surface-mount TO-263-3 configuration, the NP82N10PUF-E1-AY is suitable for integration into various electronic designs. It operates within a channel temperature range of -55°C to +175°C, with a maximum power dissipation of 150W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NP82N10PUF-E1-AY is 100 V.
The maximum continuous drain current (Id) for the NP82N10PUF-E1-AY is 82A at a case temperature of 25°C.
The Rds On is a maximum of 15mΩ when the gate-source voltage is 10V and the drain current is 41A.
The operating temperature range for this device is -55°C to +175°C.
This MOSFET is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package and is designed for surface mounting.