| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Renesas NP75P03YDG-E1-AY is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current of 75A at a case temperature (Tc).
This MOSFET offers a low on-resistance (Rds On) of 6.2mOhm at 37.5A and 10V Vgs, with a gate charge (Qg) of 141nC at 10V Vgs. The gate threshold voltage (Vgs(th)) is 2.5V at 250µA, and the maximum gate-source voltage is ±20V.
Packaged in an 8-HSON (8-SMD, Flat Lead Exposed Pad) format, this device is suitable for surface mounting. It operates at temperatures up to 175°C (TJ) and has a maximum power dissipation of 1W (Ta) or 138W (Tc).
Compliance includes RoHS3, MSL 1, and REACH Unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current is 75A.
The maximum on-resistance (Rds On) is 6.2mOhm at 37.5A and 10V Vgs.
The operating temperature range is up to 175°C (TJ).
It is supplied in an 8-HSON package, which is an 8-SMD, Flat Lead Exposed Pad type for surface mounting.