| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,684 pcs
|
1684 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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This N-Channel MOSFET, part number NP60N04ILF-E1-AZ from Renesas, is suitable for various switching applications. It features a drain-source voltage (Vdss) of 40V and can handle a continuous current of 60A at the case temperature.
The device boasts a low on-resistance (Rds On) of 6.5mOhm at 30A and 10V, ensuring efficient power transfer. The operating temperature range extends up to 175°C, making it robust for demanding environments. It is constructed using MOSFET (Metal Oxide) technology.
Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, the NP60N04ILF-E1-AZ is designed for easy integration into printed circuit boards. The mounting type is surface mount, and the supplier package code is TO-252 (MP-3Z).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NP60N04ILF-E1-AZ is 40V.
The NP60N04ILF-E1-AZ has a maximum continuous current rating of 60A at the case temperature.
The maximum on-resistance (Rds On) is 6.5mOhm when measured at 30A drain current and 10V gate-source voltage.
This MOSFET can operate at temperatures up to 175°C.
The NP60N04ILF-E1-AZ is designed for surface mounting.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.