| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Renesas, part number NP60N03KUG-E1-AY, is designed for various electronic applications requiring efficient power switching. It features a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 60A at 25°C (Tc).
The MOSFET exhibits a low on-resistance (Rds On) of 4.8mOhm at 30A and 10V gate-source voltage, contributing to reduced power loss. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, and the maximum gate-source voltage (Vgs) is ±20V. Input capacitance (Ciss) is rated at 5300 pF at 25V, with a maximum gate charge (Qg) of 93 nC at 10V.
With a maximum power dissipation of 88W (Tc) and an operating temperature range up to 175°C (TJ), this component is suitable for demanding thermal environments. It is packaged in a TO-263 surface mount configuration, facilitating integration into printed circuit boards.
The NP60N03KUG-E1-AY is built using Metal Oxide MOSFET technology. Its RoHS status is listed as RoHS3 Compliant, Moisture Sensitivity Level (MSL) is 1 Unlimited, and REACH status is Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) at 25°C is 60A.
The maximum Rds On is 4.8 milliohms at 30A and Vgs=10V.
The maximum gate charge is 93 nanocoulombs at Vgs=10V.
The maximum input capacitance is 5300 picofarads at Vds=25V.
The maximum gate threshold voltage is 4V at 250µA.
The maximum Vgs voltage rating is ±20V.