| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
180 pcs
|
180 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Renesas NP50P04SDG-E1-AY is a P-Channel MOSFET designed for power switching applications. It features a drain-to-source voltage (Vdss) of 40V and can handle a continuous drain current (Id) of 50A at 25°C (Tc).
This MOSFET has a low on-resistance (Rds On) of 9.6mOhm maximum at 25A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 2.5V maximum at 250µA. It operates with drive voltages between 4.5V and 10V.
Packaged in a TO-252 (MP-3ZK) surface mount package, the NP50P04SDG-E1-AY offers a maximum power dissipation of 1.2W (Ta) or 84W (Tc). The operating temperature range is up to 175°C (TJ).
This component is suitable for various power management circuits where efficient switching and low conduction losses are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40 V.
The continuous drain current (Id) is 50A (Tc).
The Rds On is a maximum of 9.6mOhm at 25A and 10V.
The package is TO-252-3, DPak (2 Leads + Tab), SC-63.
The operating temperature is up to 175°C (TJ).