| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,110 pcs
|
2110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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| Vgs(th) (Max) @ Id |
This Vishay Siliconix SIR876ADP-T1-GE3 is an N-Channel MOSFET from the TrenchFET® series. It is designed for high-performance applications requiring a 100V drain-to-source voltage and a continuous drain current of 40A at 25°C (Tc).
The MOSFET features a low Rds On (Max) of 10.8mOhm at 20A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 2.8V at 250µA. The drive voltage ranges from 4.5V to 10V. It has a maximum gate charge of 71 nC at 10V and an input capacitance of 3150 pF at 25V.
Packaged in a surface mount PowerPAK® SO-8, this component is suitable for various electronic designs. The operating temperature range is up to 175°C (TJ). It is specified with RoHS3 compliance and an MSL of 1.
Key electrical characteristics include a maximum gate-to-source voltage of ±20V. Power dissipation is rated at 1W (Ta) and 62.5W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SIR876ADP-T1-GE3 MOSFET is 100V.
The continuous drain current (Id) is 40A at 25°C (Tc).
The Rds On (Max) is 10.8mOhm when measured at 20A drain current and 10V gate-source voltage.
The operating temperature for this component is up to 175°C (TJ).
This MOSFET is supplied in a surface mount PowerPAK SO-8 package.
Yes, the RoHS status is RoHS3 Compliant.