NP36P06SLG-E1-AY The Renesas NP36P06SLG-E1-AY is a P-Channel MOSFET with a 60V drain-source voltage and 36A continuous drain current. It is designed for surface mount applications in a TO-252 package.
Mfr Part #:

NP36P06SLG-E1-AY

Available from 1 distributors
Mfr Name: Renesas
Renesas
The Renesas NP36P06SLG-E1-AY is a P-Channel MOSFET with a 60V drain-source voltage and 36A continuous drain current. It is designed for surface mount applications in a TO-252 package.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

NP36P06SLG-E1-AY Available from 1 distributor

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✓ Non-Authorised
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1,000 pcs
1000 pcs On Request 1 On Request On Request 17+20+22+ On Request On Request

NP36P06SLG-E1-AY Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)

NP36P06SLG-E1-AY Description

Short technical summary and product information.

The Renesas NP36P06SLG-E1-AY is a P-Channel MOSFET designed for power management applications. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 36A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 30mOhm at 18A and 10V gate-source voltage, and a gate charge (Qg) of 52 nC at 10V. The input capacitance (Ciss) is a maximum of 3200 pF at 10V Vds. The maximum gate-source voltage (Vgs) is ±20V.

 

This MOSFET has a maximum power dissipation of 1.2W (Ta) and 56W (Tc), with an operating junction temperature up to 175°C. It is housed in a TO-252 (MP-3ZK) surface mount package, specifically the TO-252-3, DPak (2 Leads + Tab), SC-63 variant.

 

Environmental compliance includes RoHS3 compliance and REACH Unaffected status. The Moisture Sensitivity Level (MSL) is 1.

NP36P06SLG-E1-AY Quick Information

Product Type: MOSFET
Canonical Name: NP36P06SLG-E1-AY P-Channel MOSFET
Subcategory: Single

NP36P06SLG-E1-AY Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NP36P06SLG-E1-AY Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NP36P06SLG-E1-AY Features

  • P-Channel MOSFET with 60V drain-source voltage.
  • Continuous drain current of 36A at 25°C.
  • Low on-resistance of 30mOhm at 18A, 10V.
  • Surface mount TO-252 package for compact designs.
  • RoHS3 compliant for environmental considerations.

NP36P06SLG-E1-AY Applications

  • Suitable for power switching circuits.
  • Used in DC-DC converters.
  • Ideal for load management.
  • Applicable in battery-powered devices.

NP36P06SLG-E1-AY FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NP36P06SLG-E1-AY?

The drain-to-source voltage (Vdss) is 60 V.

What is the continuous drain current at 25°C?

The continuous drain current (Id) is 36A.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 30mOhm at 18A and 10V gate-source voltage.

What is the operating temperature range?

The operating junction temperature (TJ) is up to 175°C.

What type of MOSFET is the NP36P06SLG-E1-AY?

It is a P-Channel MOSFET.

What package is the NP36P06SLG-E1-AY supplied in?

It is supplied in a TO-252 (MP-3ZK) package, specifically TO-252-3, DPak (2 Leads + Tab), SC-63.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

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