| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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753 pcs
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753 pcs | On Request | 1 | On Request | On Request | 1333+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The Renesas NP36P04KDG-E1-AY is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 40V and can handle a continuous drain current of 36A at the case temperature.
This MOSFET operates at a maximum junction temperature of 175°C and has a low on-resistance of 17mOhm at 18A and 10V Vgs. Key electrical characteristics include an input capacitance of 2800pF and a gate charge of 55nC. The device is suitable for surface mounting, utilizing the TO-263 package.
With a gate threshold voltage of 2.5V and a maximum gate-source voltage of ±20V, the NP36P04KDG-E1-AY is built on MOSFET (Metal Oxide) technology. It offers a power dissipation of up to 56W at the case temperature, making it a robust component for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NP36P04KDG-E1-AY is 40V.
The continuous drain current rating for this MOSFET is 36A.
The operating temperature range is up to 175°C (TJ).
The NP36P04KDG-E1-AY is available in a TO-263 package, suitable for surface mounting.
The maximum on-resistance (Rds On) is 17mOhm when measured at 18A drain current and 10V gate-source voltage.
The gate charge (Qg) is a maximum of 55nC at 10V Vgs.