NP22N055SLE-E1-AY The Renesas NP22N055SLE-E1-AY is an N-Channel MOSFET with a 55V drain-source voltage and 22A continuous drain current. It features a low Rds On of 37mOhm at 11A, 10V and is housed in a TO-252 package.
Mfr Part #:

NP22N055SLE-E1-AY

Available from 1 distributors
Mfr Name: Renesas
Renesas
The Renesas NP22N055SLE-E1-AY is an N-Channel MOSFET with a 55V drain-source voltage and 22A continuous drain current. It features a low Rds On of 37mOhm at 11A, 10V and is housed in a TO-252 package.
✓ Total Stock: 893 pcs
$ Price Range: $0.99

NP22N055SLE-E1-AY Available from 1 distributor

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893 pcs
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NP22N055SLE-E1-AY Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NP22N055SLE-E1-AY Description

Short technical summary and product information.

This N-Channel MOSFET from Renesas, part number NP22N055SLE-E1-AY, is designed for various electronic applications requiring efficient switching. It offers a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 22A at 25°C.

 

The MOSFET exhibits a maximum on-resistance (Rds On) of 37mOhm when driven at 10V with a drain current of 11A. The gate threshold voltage (Vgs(th)) is 2.5V at 250µA, and the maximum gate-source voltage (Vgs) is ±20V. Input capacitance (Ciss) is rated at 1100pF at 25V, with a gate charge (Qg) of 23nC at 5V.

 

With a maximum power dissipation of 1.2W at ambient temperature (Ta) and 45W at case temperature (Tc), this device operates within a junction temperature range of -55°C to 175°C. It is constructed using Metal Oxide Semiconductor (MOSFET) technology.

 

The NP22N055SLE-E1-AY is available in a surface-mount TO-252-3, DPak (2 Leads + Tab), SC-63 package, also known as TO-252 (MP-3ZK). It complies with RoHS3 standards and has an MSL rating of 1.

NP22N055SLE-E1-AY Quick Information

Product Type: MOSFET
Canonical Name: NP22N055SLE-E1-AY N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

NP22N055SLE-E1-AY Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NP22N055SLE-E1-AY Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NP22N055SLE-E1-AY Features

  • N-Channel MOSFET technology.
  • 55V drain-source voltage rating.
  • 22A continuous drain current.
  • Low 37mOhm Rds On at 11A, 10V.
  • Surface mount TO-252 package.

NP22N055SLE-E1-AY Applications

  • Suitable for power switching circuits.
  • Used in DC-DC converters.
  • Ideal for load management.
  • Applicable in battery powered devices.

NP22N055SLE-E1-AY FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NP22N055SLE-E1-AY?

The drain-source voltage (Vdss) for the NP22N055SLE-E1-AY is 55V.

What is the continuous drain current of the NP22N055SLE-E1-AY?

The continuous drain current (Id) at 25°C for the NP22N055SLE-E1-AY is 22A.

What is the maximum on-resistance for this MOSFET?

The Rds On is a maximum of 37mOhm at 11A drain current and 10V gate-source voltage.

What is the operating temperature range for the NP22N055SLE-E1-AY?

The operating junction temperature range is -55°C to 175°C.

What type of package is the NP22N055SLE-E1-AY in?

The NP22N055SLE-E1-AY is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.

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