| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
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800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NP160N04TUG-E1-AY is a N-Channel MOSFET manufactured by Renesas. It features a drain-to-source voltage of 40V and a continuous drain current of 160A at a case temperature. The device is designed for high-current switching and power management applications. It comes in a TO-263-7 package, which is suitable for surface mounting on circuit boards. The MOSFET has a maximum gate-to-source voltage of ±20V and a gate threshold voltage of 4V at 250µA. Its low on-resistance of 2 milliohms at 80A and 10V Vgs makes it efficient for power switching. The device can dissipate up to 1.8W at ambient temperature and up to 220W at case temperature, with an operating temperature of 175°C. It is compliant with RoHS standards and is available in a surface-mount package suitable for high-density circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 40V.
It comes in a TO-263-7 surface-mount package.
The continuous drain current is 160A at case temperature.
The maximum gate-to-source voltage is ±20V.
The maximum operating temperature is 175°C.