| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,470 pcs
|
8470 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This P-Channel MOSFET from Renesas, part number NP15P06SLG-E1-AY, is designed for power switching applications. It offers a 60V drain-to-source voltage and can handle up to 15A of current under typical conditions.
The device exhibits a maximum on-resistance of 70mOhm when driven at 10V with a 7.5A drain current. Key electrical parameters include an input capacitance of 1100pF and a gate charge of 23nC. The gate threshold voltage is 2.5V at 250µA, with a maximum gate-source voltage rating of ±20V.
Packaged in a surface-mount TO-252 (DPak) case, this MOSFET is suitable for compact designs. It operates within a temperature range of -55°C to 175°C (TJ). The power dissipation is rated at 1.2W when mounted on a PCB (Ta) and up to 30W with a heatsink (Tc).
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NP15P06SLG-E1-AY is 60V.
The NP15P06SLG-E1-AY has a continuous current rating of 15A.
The maximum on-resistance (Rds On) is 70mOhm at a drain current of 7.5A and gate-source voltage of 10V.
The NP15P06SLG-E1-AY is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package and is designed for surface mounting.
The operating temperature range for this device is up to 175°C (TJ).