NP110N055PUG-E1-AY The Renesas NP110N055PUG-E1-AY is an N-Channel MOSFET designed for high-current applications. It features a 55V drain-source voltage and a maximum continuous current of 110A.
Mfr Part #:

NP110N055PUG-E1-AY

Available from 1 distributors
Mfr Name: Renesas
Renesas
The Renesas NP110N055PUG-E1-AY is an N-Channel MOSFET designed for high-current applications. It features a 55V drain-source voltage and a maximum continuous current of 110A.
✓ Total Stock: 1,098 pcs
$ Price Range: $0.99

NP110N055PUG-E1-AY Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,098 pcs
1098 pcs On Request 1 On Request On Request 17+ On Request On Request

NP110N055PUG-E1-AY Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NP110N055PUG-E1-AY Description

Short technical summary and product information.

The Renesas NP110N055PUG-E1-AY is an N-Channel MOSFET with a drain-source voltage rating of 55V and a continuous current capability of 110A at the case temperature.

 

This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology. It offers a low on-resistance (Rds On) of 2.4mOhm at a gate-source voltage of 10V and a drain current of 55A. The gate charge (Qg) is 380 nC maximum at 10V Vgs, and the input capacitance (Ciss) is 25700 pF maximum at 25V Vds.

 

The device has a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA and can withstand a maximum gate-source voltage of ±20V. The maximum power dissipation is 288W at the case temperature and 1.8W at the ambient temperature.

 

Packaged in a TO-263 surface mount package, the NP110N055PUG-E1-AY operates at temperatures up to 175°C (TJ). It is specified as RoHS3 Compliant, with an MSL of 1 Unlimited, and REACH Unaffected.

NP110N055PUG-E1-AY Quick Information

Product Type: MOSFET
Canonical Name: NP110N055PUG-E1-AY N-Channel MOSFET
Subcategory: N-Channel

NP110N055PUG-E1-AY Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NP110N055PUG-E1-AY Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NP110N055PUG-E1-AY Features

  • N-Channel MOSFET technology.
  • 55V drain-source voltage rating.
  • 110A continuous current capability.
  • Low 2.4mOhm Rds On.
  • TO-263 surface mount package.

NP110N055PUG-E1-AY Applications

  • High-current power switching.
  • DC-DC converters.
  • Power management circuits.
  • Motor control applications.

NP110N055PUG-E1-AY FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NP110N055PUG-E1-AY?

The drain-source voltage (Vdss) for the NP110N055PUG-E1-AY is 55 V.

What is the maximum continuous current for this MOSFET?

The maximum continuous current for the NP110N055PUG-E1-AY is 110A at the case temperature.

What is the Rds On (Max) for the NP110N055PUG-E1-AY?

The Rds On (Max) is 2.4mOhm when the drain current is 55A and the gate-source voltage is 10V.

What is the operating temperature range?

The operating junction temperature (TJ) for this MOSFET is 175°C.

What package type is the NP110N055PUG-E1-AY supplied in?

The NP110N055PUG-E1-AY is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

How is this component mounted?

This component is designed for surface mount.

Home
Account

Categories