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NP110N04PUG-E1-AY The Renesas NP110N04PUG-E1-AY is an N-Channel MOSFET with a 40V drain-source voltage and 110A continuous drain current. It features a low 1.8mOhm Rds On at 55A, 10V.
Mfr Part #:

NP110N04PUG-E1-AY

Available from 1 distributors
Mfr Name: Renesas
Renesas
The Renesas NP110N04PUG-E1-AY is an N-Channel MOSFET with a 40V drain-source voltage and 110A continuous drain current. It features a low 1.8mOhm Rds On at 55A, 10V.
✓ Total Stock: 570 pcs
$ Price Range: $0.99

NP110N04PUG-E1-AY Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
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570 pcs
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570 pcs On Request 1 On Request On Request 15+ On Request On Request
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NP110N04PUG-E1-AY Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NP110N04PUG-E1-AY Description

Short technical summary and product information.

This N-Channel MOSFET from Renesas, part number NP110N04PUG-E1-AY, is designed for power switching applications. It offers a maximum drain-source voltage (Vdss) of 40V and can handle a continuous drain current of 110A at case temperature.

 

The MOSFET exhibits a low on-resistance (Rds On) of 1.8mOhm at 55A drain current and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 390nC at 10V and an input capacitance (Ciss) of 25700pF at 25V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-source voltage of ±20V.

 

Operating at temperatures up to 175°C (TJ), this device has a power dissipation rating of 288W at case temperature and 1.8W at ambient temperature. It is housed in a TO-263 package, suitable for surface mounting.

 

The NP110N04PUG-E1-AY is specified as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status.

NP110N04PUG-E1-AY Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NP110N04PUG-E1-AY Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NP110N04PUG-E1-AY Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NP110N04PUG-E1-AY Features

  • 40V drain-source voltage rating.
  • 110A continuous drain current capability.
  • Low 1.8mOhm Rds On at 55A, 10V.
  • TO-263 surface mount package.
  • 175°C maximum junction temperature.

NP110N04PUG-E1-AY Applications

  • Power supply switching applications.
  • Motor control circuits.
  • DC-DC converters.
  • Load switch applications.

NP110N04PUG-E1-AY FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NP110N04PUG-E1-AY?

The maximum drain-source voltage (Vdss) is 40V.

What is the continuous drain current rating?

The continuous drain current is 110A at case temperature.

What is the Rds On (Max) at specified conditions?

The Rds On is a maximum of 1.8mOhm at 55A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction temperature is up to 175°C.

What package type is the NP110N04PUG-E1-AY supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting.

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