| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,200 pcs
|
11200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Renesas, part number NP109N04PUG-E1-AY, is designed for power switching applications. It offers a 40V drain-to-source breakdown voltage and can handle a continuous drain current of 110A at a case temperature.
The MOSFET exhibits a low on-resistance of 2.3mOhm maximum at 55A and 10V gate drive voltage. Key electrical parameters include an input capacitance of 15750pF and a gate charge of 270nC. The gate threshold voltage is 4V maximum at 250µA, with a maximum gate-source voltage rating of ±20V.
Packaged in a TO-263-3, D²Pak configuration, this device is suitable for surface mounting. It operates within a temperature range of -55°C to 175°C (TJ). The power dissipation is rated at 1.8W (ambient) and 220W (case).
This component utilizes Metal Oxide technology and is designed for applications requiring high current and low on-resistance. Its robust construction and specifications make it suitable for various power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 40V.
The continuous drain current is 110A, measured at the case.
The maximum on-resistance is 2.3mOhm when measured at 55A drain current and 10V gate-source voltage.
The operating junction temperature range is from -55°C to 175°C.
It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
This MOSFET is designed for surface mounting.