NP100P06PDG-E1-AY The Renesas NP100P06PDG-E1-AY is a P-Channel MOSFET with a 60V drain-to-source voltage and a 100A current rating. It features a low on-resistance of 6mOhm at 50A and 10V.
Mfr Part #:

NP100P06PDG-E1-AY

Available from 2 distributors
Mfr Name: Renesas
Renesas
The Renesas NP100P06PDG-E1-AY is a P-Channel MOSFET with a 60V drain-to-source voltage and a 100A current rating. It features a low on-resistance of 6mOhm at 50A and 10V.
✓ Total Stock: 9,646 pcs
$ Price Range: $0.99

NP100P06PDG-E1-AY Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,386 pcs
7386 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,260 pcs
2260 pcs On Request 1 On Request On Request 1322+ On Request On Request

NP100P06PDG-E1-AY Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NP100P06PDG-E1-AY Description

Short technical summary and product information.

This Renesas NP100P06PDG-E1-AY is a P-Channel MOSFET designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 60V and can handle a continuous current of 100A at case temperature.

 

The MOSFET has a low on-resistance (Rds On) of 6mOhm, measured at 50A and 10V gate-source voltage, ensuring efficient power transfer. Key electrical parameters include an input capacitance (Ciss) of 15000 pF at 10V and a gate charge (Qg) of 300 nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA, with a maximum gate-source voltage (Vgs) of ±20V.

 

Packaged in a TO-263 surface mount package, this device is suitable for various electronic circuits. It operates at temperatures up to 175°C (TJ) and has a maximum power dissipation of 1.8W at ambient temperature or 200W at case temperature.

 

The NP100P06PDG-E1-AY is RoHS3 compliant and has an MSL of 1.

NP100P06PDG-E1-AY Quick Information

Product Type: MOSFET
Canonical Name: Renesas NP100P06PDG-E1-AY P-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

NP100P06PDG-E1-AY Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NP100P06PDG-E1-AY Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NP100P06PDG-E1-AY Features

  • P-Channel MOSFET with 60V drain-source voltage.
  • 100A continuous current rating at case temperature.
  • Low 6mOhm on-resistance at 50A, 10V.
  • Surface mount TO-263 package.
  • RoHS3 compliant.

NP100P06PDG-E1-AY Applications

  • Suitable for high-current power switching.
  • Used in power management circuits.
  • Ideal for DC-DC converters.
  • Applications requiring efficient power transfer.

NP100P06PDG-E1-AY FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NP100P06PDG-E1-AY?

The maximum drain-to-source voltage (Vdss) is 60V.

What is the continuous current rating of the NP100P06PDG-E1-AY?

The continuous current rating is 100A at case temperature.

What is the on-resistance of the NP100P06PDG-E1-AY?

The maximum on-resistance is 6mOhm at 50A and 10V.

What is the operating temperature range for this MOSFET?

The operating junction temperature (TJ) is up to 175°C.

What package type is the NP100P06PDG-E1-AY supplied in?

It is supplied in a TO-263 package, suitable for surface mounting.

Is the NP100P06PDG-E1-AY RoHS compliant?

Yes, it is RoHS3 compliant.

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