| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,400 pcs
|
6400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This P-Channel MOSFET from Renesas, part number NP100P04PLG-E1-AY, offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 100A at 25°C. It features a low on-resistance (Rds On) of 3.7mOhm at 50A and 10V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 2.5V at 1mA.
The MOSFET has a maximum gate-source voltage (Vgs) of ±20V and an input capacitance (Ciss) of 15100 pF at 10V. Its maximum power dissipation is rated at 1.8W (Ta) and 200W (Tc), with an operating temperature range up to 175°C (TJ).
Designed for surface mounting, the NP100P04PLG-E1-AY comes in a TO-263 package. The technology used is MOSFET (Metal Oxide), providing efficient switching capabilities for various power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 40 V.
The continuous drain current (Id) is 100 A at 25°C.
The maximum on-resistance is 3.7 mOhm at 50A and 10V gate-source voltage.
The operating temperature range is up to 175°C (TJ).
It is supplied in a TO-263 package.
This MOSFET is designed for surface mounting.