NP100P04PDG-E1-AY The Renesas NP100P04PDG-E1-AY is a P-Channel MOSFET designed for power applications. It features a 40V drain-source voltage and a continuous drain current of 100A.
Mfr Part #:

NP100P04PDG-E1-AY

Available from 1 distributors
Mfr Name: Renesas
Renesas
The Renesas NP100P04PDG-E1-AY is a P-Channel MOSFET designed for power applications. It features a 40V drain-source voltage and a continuous drain current of 100A.
✓ Total Stock: 800 pcs
$ Price Range: $0.99

NP100P04PDG-E1-AY Available from 1 distributor

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NP100P04PDG-E1-AY Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NP100P04PDG-E1-AY Description

Short technical summary and product information.

The Renesas NP100P04PDG-E1-AY is a P-Channel MOSFET with a Metal Oxide semiconductor technology. It is rated for a maximum drain-source voltage (Vdss) of 40V and can handle a continuous drain current of 100A at case temperature.

 

Key electrical characteristics include a maximum on-resistance of 3.5mOhm at 50A and 10V, an input capacitance of 15100pF at 10V, and a gate charge of 320nC at 10V. The gate-to-source voltage has a maximum rating of ±20V, with a gate threshold voltage of 2.5V at 1mA. The device operates at temperatures up to 175°C (TJ).

 

This MOSFET is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package and is designed for surface mounting. Its power dissipation is rated at 1.8W (Ta) and 200W (Tc).

 

The NP100P04PDG-E1-AY is suitable for various power switching applications where a robust P-Channel MOSFET is required.

NP100P04PDG-E1-AY Quick Information

Product Type: MOSFET
Canonical Name: Renesas NP100P04PDG-E1-AY P-Channel MOSFET
Subcategory: P-Channel

NP100P04PDG-E1-AY Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NP100P04PDG-E1-AY Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NP100P04PDG-E1-AY Features

  • P-Channel MOSFET with 40V drain-source voltage.
  • Handles 100A continuous drain current.
  • Low on-resistance of 3.5mOhm maximum.
  • Surface mount TO-263 package.
  • Operates up to 175°C junction temperature.

NP100P04PDG-E1-AY Applications

  • Ideal for power switching circuits.
  • Suitable for high current applications.
  • Used in power management systems.
  • Designed for industrial applications.

NP100P04PDG-E1-AY FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NP100P04PDG-E1-AY?

The maximum drain-source voltage (Vdss) for the NP100P04PDG-E1-AY is 40V.

What is the continuous drain current rating?

The continuous drain current rating is 100A at the case temperature.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 3.5mOhm when measured at 50A drain current and 10V gate-source voltage.

What is the package type for the NP100P04PDG-E1-AY?

The NP100P04PDG-E1-AY is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

What is the operating temperature range?

The operating temperature range is up to 175°C (TJ).

Is this MOSFET RoHS compliant?

Yes, the RoHS Status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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