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62,890 pcs
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62890 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NLSF302MNR2G is an advanced high-speed CMOS 2-input NOR gate from ON Semiconductor. Fabricated with silicon gate CMOS technology, it achieves high speed operation while maintaining low power dissipation. The internal circuit includes a buffer output for high noise immunity and stable output.
This device is designed for a 2.0 V to 5.5 V operating range, allowing interface between different voltage systems. Key electrical specifications include a maximum propagation delay of 7.5 ns at 5V and 50pF, and a low supply current of 2.0 µA maximum at 25°C. The inputs tolerate voltages up to 7.0 V.
The NLSF302MNR2G comes in a 16-QFN (3x3) surface mount package. It operates within a temperature range of -40°C to 85°C. The part offers high noise immunity and power-down protection on inputs. ESD performance is rated at over 2000 V for the Human Body Model and over 200 V for the Machine Model.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NLSF302MNR2G operates from 2.0 V to 5.5 V.
The NLSF302MNR2G operates from -40°C to 85°C.
The typical propagation delay is 3.6 ns at VCC = 5.0 V, with a maximum of 7.5 ns at 5 V and 50 pF load.
The NLSF302MNR2G is available in a 16-QFN (3x3 mm) surface-mount package.
The NLSF302MNR2G is a NOR gate.
Each gate has 2 inputs.
The NLSF302MNR2G contains 4 circuits.