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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,490 pcs
|
2490 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current - Continuous | |
| Collector Current - Peak | |
| Collector Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Second Breakdown Collector with Base Forward Biased | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NJW3281G from ON Semiconductor is a high-performance NPN silicon power bipolar transistor. It is engineered for demanding applications such as high-power audio amplifiers, disk head positioners, and other linear circuits.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 250V and a continuous collector current (IC) of 15A. The transistor can handle a peak collector current of 30A and a continuous base current of 1.6A. It offers a total power dissipation of 200W at 25°C case temperature and features a DC current gain (hFE) of 75 minimum at 3A collector current and 5V VCE.
Designed for reliable performance at higher power levels, the NJW3281G exhibits exceptional safe operating area and excellent gain linearity. Its complementary NPN-PNP gain matching within 10% from 50mA to 5A is beneficial in complementary configurations.
The transistor is housed in a TO-3P-3L package, suitable for through-hole mounting. It operates within a junction temperature range of -65°C to +150°C, with a thermal resistance junction-to-case of 0.625°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NJW3281G is 250 Vdc.
The continuous collector current (IC) rating for the NJW3281G is 15 Adc.
The total power dissipation (PD) for the NJW3281G is 200 W at 25°C.
The operating and storage junction temperature range (TJ, Tstg) is -65°C to +150°C.
The NJW3281G is supplied in a TO-3P-3L package.
Yes, the NJW3281G is RoHS3 compliant.