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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,040 pcs
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5040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current - Peak | |
| Collector-Base Breakdown Voltage | |
| Current | |
| Current Collector Continuous | |
| Current Collector Cutoff (Maximum @ VCE = 200 V, TC = 125 °C) | |
| Current Collector Cutoff (Maximum @ VCE = 250 V) | |
| Current Collector Cutoff (Maximum @ VCE = 500 V) | |
| Current Collector Cutoff (Maximum @ VCE = 500 V, TC = 125 °C) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Power Dissipation Derate | |
| Power Dissipation Total (@ TC = 25 °C) | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage - Collector Emitter Breakdown | |
| Voltage Collector Emitter Sustaining (Minimum @ IC = 10 mA, L = 10 mH) | |
| Voltage Collector Emitter Sustaining (Minimum) |
The NJVNJD35N04T4G from ON Semiconductor is a high voltage NPN Darlington power transistor. It is specifically designed for inductive load applications such as electronic ignition, switching regulators, and motor control.
Key electrical specifications include a collector-emitter sustaining voltage of 350V, a continuous collector current of 4A, and a peak collector current of 8A. The device offers a high DC current gain (hFE) of 2000 minimum at 2A and 2V, and a Vce saturation of 1.5V maximum at 20mA and 2A. It can dissipate up to 45W of power at 25°C case temperature, with a derating of 0.36W/°C above that temperature.
This transistor operates within a junction temperature range of -65°C to +150°C. It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. The thermal resistance from junction to case is 2.78°C/W, and junction to ambient is 71.4°C/W.
The NJVNJD35N04T4G is designed for reliable performance at higher powers and features a very low current requirement for its base. It is also noted as a Pb-Free device.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter sustaining voltage (VCEO) for the NJVNJD35N04T4G is 350 Vdc.
The continuous collector current (IC) for the NJVNJD35N04T4G is 4.0 Adc.
The total power dissipation (PD) for the NJVNJD35N04T4G is 45 W at a case temperature of 25°C.
The operating and storage junction temperature range for the NJVNJD35N04T4G is -65°C to +150°C.
The NJVNJD35N04T4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The device is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.