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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,900 pcs
|
3900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current - Continuous | |
| Collector Current - Peak | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Collector-Emitter Voltage (Max) | |
| Continuous Collector Current | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Frequency | |
| Gain-Bandwidth Product | |
| ICEO (Maximum @ VCE = 200 V, TC = 125 °C) | |
| ICEO (Maximum @ VCE = 250 V) | |
| ICES (Maximum @ VCE = 500 V) | |
| ICES (Maximum @ VCE = 500 V, TC = 125 °C) | |
| Maximum Collector Cut-off Current | |
| Mounting Type | |
| Operating Temperature | |
| PD (Maximum @ Tc=25 °C) | |
| PD (Unspecified condition) | |
| Power | |
| Power Dissipation Derate | |
| Supplier Device Package | |
| TJ, TSTG (Minimum/Maximum) | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| VCBO | |
| VEBO | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor NJVNJD35N04G is a high voltage NPN Darlington power transistor specifically engineered for demanding inductive load applications such as electronic ignition, switching regulators, and motor controls.
This device boasts a maximum Collector-Emitter Sustaining Voltage (VCEO) of 350Vdc and a continuous Collector Current (IC) of 4A, with a peak capability of 8A. It features a high DC Current Gain (hFE) of 2000 at 2A and 2V, and a Vce Saturation voltage of 1.5V at 20mA and 2A. The total power dissipation is rated at 45W at 25°C.
Designed for reliability, the NJVNJD35N04G operates within a junction temperature range of -65°C to +150°C. It is housed in a DPAK (TO-252) surface mount package, suitable for space-constrained designs.
Key features include an exceptional Safe Operating Area, high VCE, and high current gain. The NJV prefix variants are AEC-Q101 qualified and PPAP capable, indicating suitability for automotive and other stringent applications. This transistor is also a Pb-Free device.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Sustaining Voltage (VCEO) is 350 Vdc.
The continuous collector current is 4.0 Adc.
The total power dissipation is 45 W at 25°C.
The operating and storage junction temperature range is -65°C to +150°C.
The device is supplied in a DPAK (TO-252) surface mount package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.