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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
128,520 pcs
|
128520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,810 pcs
|
2810 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 1737+ | On Request | On Request | |
|
105 pcs
|
105 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Base Current | |
| Base Emitter On Voltage (Maximum @ IC = 0.75 A, VCE = 1.6 Vdc, −40 °C ≤ TJ ≤ 150 °C) | |
| Base Emitter On Voltage (Maximum @ IC = 1 A, VCE = 2 Vdc) | |
| Collector Current - Peak | |
| Collector Cutoff Current | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 0.5 A, IB = 0.025 A) | |
| Collector-Base Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| DC Current Gain (Minimum @ IC = 0.75 A, VCE = 1.6 Vdc, −40 °C ≤ TJ ≤ 150 °C) | |
| DC Current Gain (Minimum @ IC = 2 A, VCE = 2 Vdc) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Frequency | |
| Halogen Free | |
| Junction to Ambient Thermal Resistance | |
| Junction to Case Thermal Resistance | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor NJVNJD2873T4G is an NPN silicon power transistor in a DPAK surface mount package. It is designed for high-gain audio amplifier applications, offering features such as high DC current gain and low collector-emitter saturation voltage.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 2A. The device has a maximum power dissipation of 15W at 25°C case temperature and a gain-bandwidth product of 65MHz. The operating temperature range is from -65°C to 175°C.
The transistor is housed in a TO-252-3, DPAK package, suitable for surface mounting. It meets UL 94 V-0 flammability standards. The device is Pb-free and halogen-free, complying with RoHS standards.
This transistor is suitable for various audio amplification circuits and other applications requiring a robust NPN power transistor in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NJVNJD2873T4G is 50V.
The continuous collector current (IC) rating for the NJVNJD2873T4G is 2A.
The minimum DC current gain (hFE) at 0.5A and 2V is 120.
The collector-emitter saturation voltage (VCE(sat)) at 1A and 50mA is a maximum of 0.3V.
The operating temperature range is -65°C to 175°C.
The power dissipation (PD) is 1.68W at 25°C ambient temperature.
The NJVNJD2873T4G is an NPN silicon bipolar transistor.