NJVNJD1718T4G The ON Semiconductor NJVNJD1718T4G is a PNP silicon power transistor designed for audio amplifier and power switching applications. It offers a 50V collector-emitter voltage and 2A continuous collector current.
Mfr Part #:

NJVNJD1718T4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NJVNJD1718T4G is a PNP silicon power transistor designed for audio amplifier and power switching applications. It offers a 50V collector-emitter voltage and 2A continuous collector current.
Total Stock: 7,500 pcs
$ Price Range: $0.99

NJVNJD1718T4G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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7,500 pcs
7500 pcs On Request 1 On Request On Request On Request On Request On Request

NJVNJD1718T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current
Collector-Emitter Breakdown Voltage
Current
Current (Maximum)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Supplier Package
Thermal Resistance (Maximum @ Junction to case)
Thermal Resistance (Maximum @ Junction-to-Ambient)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NJVNJD1718T4G Description

Short technical summary and product information.

The NJVNJD1718T4G from ON Semiconductor is a PNP silicon power transistor suitable for high-gain audio amplifier and power switching applications. It features a low collector-emitter saturation voltage and high switching speed.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of -50V, a continuous collector current (IC) of -2A, and a peak collector current (ICM) of -3A. The device offers a typical DC current gain (hFE) of 70 at 500mA and 2V, with a maximum Vce saturation of 500mV at 50mA and 1A. Its power dissipation is rated at 15W at 25°C case temperature and 1.68W at 25°C ambient temperature.

 

This transistor is housed in a DPAK (TO-252-3, DPak) surface mount package, making it ideal for space-constrained designs. The operating temperature range is -65°C to 150°C (TJ). The device is Pb-Free and Halogen Free, complying with RoHS standards.

 

Designed for reliability, the NJVNJD1718T4G is a robust component for various electronic circuits requiring efficient power amplification or switching.

NJVNJD1718T4G Quick Information

Product Type: Power Transistor
Canonical Name: PNP Silicon DPAK Power Transistor
Subcategory: PNP

NJVNJD1718T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NJVNJD1718T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJVNJD1718T4G Features

  • PNP silicon power transistor.
  • Designed for audio amplifier applications.
  • Rated for 50V collector-emitter voltage.
  • Handles 2A continuous collector current.
  • Surface mount DPAK package.

NJVNJD1718T4G Applications

  • Suitable for audio amplifier circuits.
  • Used in power switching applications.
  • Ideal for high-gain amplification.
  • Compact surface mount designs.

NJVNJD1718T4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NJVNJD1718T4G?

-50 Vdc

What is the continuous collector current rating?

-2 Adc

What is the operating temperature range?

-65°C ~ 150°C

What package type is the NJVNJD1718T4G supplied in?

TO-252-3, DPak (2 Leads + Tab), SC-63

Is the NJVNJD1718T4G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the moisture sensitivity level (MSL)?

1 Unlimited

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