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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor NJVMJK45H11TWG is a PNP bipolar transistor suitable for surface mount applications. It features a maximum DC collector current of 8A and a maximum power dissipation of 20W. The transistor operates within a temperature range of -65°C to 150°C.
Key electrical characteristics include a maximum collector emitter voltage of 80V and a typical DC current gain (hFE) of 60 at 2A and 1V. The Vce saturation is a maximum of 1V at 400mA and 8A. The transition frequency (fT) is 90MHz.
This transistor is packaged in a SOT-669 (LFPAK4) case, measuring 5mm in length, 4.25mm in width, and 1.3mm in height. It is designed for surface mounting.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are currently unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC collector current is 8A.
The maximum power dissipation is 20W.
The operating temperature range is -65°C to 150°C.
The NJVMJK45H11TWG is supplied in a SOT-669 package.
The NJVMJK45H11TWG is a surface mount device.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.