| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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85 pcs
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85 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor NJVMJD45H11T4G-VF01 is a PNP power transistor designed for general purpose power and switching applications, such as output or driver stages in switching regulators, converters, and power amplifiers. It offers a maximum collector-emitter voltage of 80V and a continuous collector current of 8A.
This transistor has a maximum power dissipation of 1.75W at 25°C ambient temperature and a junction-to-case thermal resistance of 6.25°C/W. The operating and storage junction temperature range is from -55°C to +150°C.
Packaged in a DPAK surface mount package (TO-252-3, DPAK), the NJVMJD45H11T4G-VF01 is suitable for applications requiring compact board space. It features a minimum DC current gain (hFE) of 40 at 4A and 1V, and a Vce saturation of 1V maximum at 400mA and 8A. The transition frequency is 90MHz.
This device is Pb-Free and Halogen Free, compliant with RoHS standards. It is electrically similar to the D44H/D45H series.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 80 Vdc.
The continuous collector current is 8 Adc.
The operating and storage junction temperature range is -55°C to +150°C.
This transistor is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, suitable for surface mounting.
Yes, this component is RoHS3 Compliant.
The minimum DC current gain (hFE) is 40 at 4A collector current and 1V collector-emitter voltage.
The Vce saturation voltage is a maximum of 1V at 400mA base current and 8A collector current.