NJVMJD45H11RLG The NJVMJD45H11RLG is a bipolar junction transistor (BJT) from On Semiconductor. It supports a collector-emitter voltage of 80V and a continuous collector current of 8A. Designed for surface mount applications, it features a DPAK package suitable for various electronic circuits.
Mfr Part #:

NJVMJD45H11RLG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NJVMJD45H11RLG is a bipolar junction transistor (BJT) from On Semiconductor. It supports a collector-emitter voltage of 80V and a continuous collector current of 8A. Designed for surface mount applications, it features a DPAK package suitable for various electronic circuits.
Total Stock: 1,000 pcs
$ Price Range: $0.99

NJVMJD45H11RLG Available from 1 distributor

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NJVMJD45H11RLG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Peak
Collector-Emitter Sustaining Voltage
Current
Current Collector Continuous (Maximum)
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Human Body Model
ESD Machine Model
Frequency
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Power Dissipation Total (Maximum @ TA=25 °C)
Power Dissipation Total (Maximum @ Tc = 25 °C)
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage Collector Emitter (Maximum)

NJVMJD45H11RLG Description

Short technical summary and product information.

The NJVMJD45H11RLG is a bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for switching and amplification applications requiring high voltage and current handling. The device supports a collector-emitter voltage of up to 80V and a collector current of 8A, with a peak collector current of 16A. Its power dissipation is rated at 1.75W, and it can operate within a junction temperature range of -55°C to +150°C. The transistor is packaged in a surface-mount DPAK form factor, making it suitable for compact electronic designs. Its electrical characteristics include a minimum DC current gain (hFE) of 60 at 2A and 1V, and it has ESD protection levels of 3B V for the human body model and C V for the machine model.

NJVMJD45H11RLG Quick Information

Product Type: Transistor - Bipolar (BJT) - Single
Canonical Name: NJVMJD45H11RLG

NJVMJD45H11RLG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NJVMJD45H11RLG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJVMJD45H11RLG Features

  • Supports up to 80V collector-emitter voltage
  • Continuous collector current of 8A
  • Peak collector current of 16A
  • Surface mount DPAK package
  • Minimum DC current gain of 60

NJVMJD45H11RLG Applications

  • Used in high-voltage switching circuits
  • Suitable for power amplification applications
  • Ideal for compact electronic designs
  • Applicable in automotive and industrial electronics

NJVMJD45H11RLG FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the NJVMJD45H11RLG?

The maximum collector-emitter voltage is 80V.

What is the collector current rating for this transistor?

The collector current is rated at 8A continuous and 16A peak.

What package type does the NJVMJD45H11RLG use?

It uses a surface mount DPAK package.

What is the operating junction temperature range?

The operating junction temperature range is from -55°C to +150°C.

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