NJVMJD44H11T4G-VF01 The On Semiconductor NJVMJD44H11T4G-VF01 is an NPN bipolar power transistor designed for general purpose power and switching applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 8A.
Mfr Part #:

NJVMJD44H11T4G-VF01

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NJVMJD44H11T4G-VF01 is an NPN bipolar power transistor designed for general purpose power and switching applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 8A.
Total Stock: 100,000 pcs
$ Price Range: $0.99

NJVMJD44H11T4G-VF01 Available from 1 distributor

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NJVMJD44H11T4G-VF01 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Protection (HBM)
ESD Protection (MM)
Frequency
Halogen Free
Lead Temperature for Soldering
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation (Maximum @ TC=25 °C)
Standard Package Quantity
Supplier Device Package
Supplier Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ Peak)
voltage (Minimum @ IC = 30 mA, IB = 0)

NJVMJD44H11T4G-VF01 Description

Short technical summary and product information.

The NJVMJD44H11T4G-VF01 from On Semiconductor is an NPN bipolar junction transistor (BJT) designed for power and switching applications. It is suitable for use in output or driver stages of switching regulators, converters, and power amplifiers.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 8A. The device offers a peak collector current (ICM) of 16A and a maximum power dissipation of 20W at TC = 25°C. It has a DC current gain (hFE) of 40 minimum at 4A/1V and a Vce saturation of 1V maximum at 400mA/8A. The transistor operates at frequencies up to 85MHz.

 

This transistor is housed in a DPAK (TO-252-3) surface mount package, making it suitable for space-constrained applications. The operating and storage junction temperature range is from -55°C to 150°C. The device is Pb-free and Halogen-free, complying with RoHS standards.

 

Its complementary pair design simplifies circuit configurations. The low collector-emitter saturation voltage and fast switching speeds make it an efficient choice for various power management tasks.

NJVMJD44H11T4G-VF01 Quick Information

Product Type: Bipolar Transistor
Canonical Name: NPN Power Transistor
Subcategory: Single

NJVMJD44H11T4G-VF01 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NJVMJD44H11T4G-VF01 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJVMJD44H11T4G-VF01 Features

  • 80V collector-emitter voltage rating.
  • 8A continuous collector current.
  • 20W maximum power dissipation.
  • DPAK surface mount package.
  • Pb-free and Halogen-free construction.

NJVMJD44H11T4G-VF01 Applications

  • Used in switching regulators.
  • Suitable for power converters.
  • Applied in power amplifiers.
  • General purpose power switching.

NJVMJD44H11T4G-VF01 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NJVMJD44H11T4G-VF01?

The maximum collector-emitter voltage is 80 Vdc.

What is the continuous collector current rating?

The continuous collector current is 8 Adc.

What is the maximum power dissipation?

The maximum power dissipation is 20 W at TC = 25°C.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What is the package type for this transistor?

The transistor is supplied in a DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63) surface mount package.

Is the NJVMJD44H11T4G-VF01 RoHS compliant?

Yes, the device is RoHS3 Compliant.

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