NJVMJD44H11G The ON Semiconductor NJVMJD44H11G is an NPN bipolar junction transistor designed for general purpose power and switching applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 8A.
Mfr Part #:

NJVMJD44H11G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NJVMJD44H11G is an NPN bipolar junction transistor designed for general purpose power and switching applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 8A.
Total Stock: 5,385 pcs
$ Price Range: $0.99

NJVMJD44H11G Available from 1 distributor

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NJVMJD44H11G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Protection (Maximum @ HBM)
ESD Protection (Maximum @ MM)
Frequency
Halogen Free
Lead Temperature for Soldering
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Thermal Resistance (Maximum @ JA (Note 2)
Thermal Resistance (Maximum @ JC)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ Peak)
voltage (Minimum @ IC = 30 mA, IB = 0)

NJVMJD44H11G Description

Short technical summary and product information.

The ON Semiconductor NJVMJD44H11G is a complementary power NPN transistor designed for general purpose power and switching applications such as output or driver stages in switching regulators, converters, and power amplifiers. It offers a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 8A.

 

This transistor features a low collector-emitter saturation voltage and fast switching speeds, simplifying design efforts. It is packaged in a DPAK (TO-252-3, DPak) surface mount package, making it suitable for space-constrained applications. The operating temperature range is -55°C to 150°C (TJ).

 

The device is RoHS3 compliant, lead-free, and halogen-free, meeting environmental standards for modern electronic designs. Its complementary pair nature simplifies circuit design when paired with PNP transistors.

 

Key electrical characteristics include a DC current gain (hFE) of 40 at 4A and 1V, and a Vce saturation of 1V at 400mA and 8A. The frequency response extends to 85MHz.

NJVMJD44H11G Quick Information

Product Type: Transistor
Canonical Name: NPN Power Transistor
Subcategory: Single

NJVMJD44H11G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NJVMJD44H11G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJVMJD44H11G Features

  • NPN power transistor for switching applications.
  • 80V collector-emitter voltage rating.
  • 8A continuous collector current.
  • DPAK surface mount package.
  • RoHS3, lead-free, and halogen-free compliant.

NJVMJD44H11G Applications

  • Used in switching regulators.
  • Suitable for power converters.
  • Applicable for power amplifiers.
  • General purpose power switching.

NJVMJD44H11G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NJVMJD44H11G?

The maximum collector-emitter voltage (VCEO) for the NJVMJD44H11G is 80 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for this transistor is 8 Adc.

What is the operating temperature range?

The operating temperature range for the NJVMJD44H11G is -55°C to 150°C.

What package type is the NJVMJD44H11G supplied in?

This transistor is supplied in a DPAK (TO-252-3, DPak) surface mount package.

Is the NJVMJD44H11G RoHS compliant?

Yes, the NJVMJD44H11G is RoHS3 compliant.

Is this transistor lead-free and halogen-free?

Yes, the NJVMJD44H11G is lead-free and halogen-free.

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