NJVMJD42CT4G The ON Semiconductor NJVMJD42CT4G is a PNP bipolar junction transistor designed for general purpose amplifier and switching applications. It features a 100V collector-emitter voltage and 6A continuous collector current.
Mfr Part #:

NJVMJD42CT4G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NJVMJD42CT4G is a PNP bipolar junction transistor designed for general purpose amplifier and switching applications. It features a 100V collector-emitter voltage and 6A continuous collector current.
Total Stock: 11,137 pcs
$ Price Range: $0.99

NJVMJD42CT4G Available from 4 distributors

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Non-Authorised

NJVMJD42CT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector Cutoff Current
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (hFE)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Frequency - Transition
Mounting Type
Operating Temperature
Power
Supplier Device Package
Total Power Dissipation (Maximum @ Tc=25 °C)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NJVMJD42CT4G Description

Short technical summary and product information.

The ON Semiconductor NJVMJD42CT4G is a PNP power transistor designed for general purpose amplifier and low-speed switching applications. It is packaged in a DPAK surface mount package, making it suitable for automated assembly processes.

 

Key electrical characteristics include a maximum collector-emitter voltage of 100V and a continuous collector current rating of 6A. The device offers a DC current gain (hFE) of at least 30 at 300mA and 4V, with a Vce saturation of 1.5V maximum at 600mA and 6A. The transition frequency is rated at 3MHz.

 

This transistor operates within a junction temperature range of -65°C to 150°C. It is RoHS3 compliant and designed for surface mounting. The DPAK package (TO-252-3) is a common choice for power applications where space is a consideration.

 

Electrically similar to the popular TIP41 and TIP42 series, the NJVMJD42CT4G is suitable for various electronic circuits requiring a robust PNP transistor.

NJVMJD42CT4G Quick Information

Product Type: Bipolar Transistor (BJT)
Canonical Name: NJVMJD42CT4G PNP Power Transistor
Subcategory: PNP

NJVMJD42CT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NJVMJD42CT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJVMJD42CT4G Features

  • PNP bipolar junction transistor.
  • 100V collector-emitter voltage rating.
  • 6A continuous collector current.
  • DPAK surface mount package.
  • RoHS3 compliant.

NJVMJD42CT4G Applications

  • General purpose amplifier circuits.
  • Low speed switching applications.
  • Power supply regulation circuits.
  • Motor control applications.

NJVMJD42CT4G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NJVMJD42CT4G?

The maximum collector-emitter voltage (VCEO) for the NJVMJD42CT4G is 100 Vdc.

What is the continuous collector current rating of the NJVMJD42CT4G?

The continuous collector current (IC) for the NJVMJD42CT4G is 6 Adc.

What is the operating temperature range for this transistor?

The operating and storage junction temperature range for the NJVMJD42CT4G is -65°C to 150°C.

What package type is the NJVMJD42CT4G supplied in?

The NJVMJD42CT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the NJVMJD42CT4G RoHS compliant?

Yes, the NJVMJD42CT4G is RoHS3 Compliant.

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