NJVMJD350T4G The ON Semiconductor NJVMJD350T4G is a PNP bipolar transistor designed for switching applications. It offers a 300V collector-emitter voltage and 0.5A continuous collector current.
Mfr Part #:

NJVMJD350T4G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NJVMJD350T4G is a PNP bipolar transistor designed for switching applications. It offers a 300V collector-emitter voltage and 0.5A continuous collector current.
Total Stock: 42,898 pcs
$ Price Range: $0.99

NJVMJD350T4G Available from 3 distributors

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40,000 pcs
40000 pcs On Request 1 On Request On Request On Request On Request On Request
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2,358 pcs
2358 pcs On Request 1 On Request On Request On Request On Request On Request
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540 pcs
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NJVMJD350T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current (Maximum)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain (Minimum/Maximum)
Halogen Free
Mounting Type
Operating Temperature
Operating Temperature (Minimum/Maximum)
Pb-Free
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum)
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NJVMJD350T4G Description

Short technical summary and product information.

The ON Semiconductor NJVMJD350T4G is a high voltage power transistor in a PNP configuration. It is designed for applications such as line operated audio output amplifiers and switchmode power supply drivers.

 

Key electrical specifications include a maximum collector-emitter voltage of 300V and a continuous collector current of 0.5A. The device can handle a peak collector current of 0.75A and has a maximum power dissipation of 15W at 25°C case temperature. The gain bandwidth product is 10MHz.

 

This transistor operates within a temperature range of -65°C to 150°C. It is housed in a DPAK surface mount package, specifically TO-252-3, DPak (2 Leads + Tab), SC-63. The mounting type is surface mount, making it suitable for compact PCB designs.

 

The device is Pb-Free and Halogen Free, complying with RoHS standards. It is electrically similar to popular MJE340 and MJE350 series transistors.

NJVMJD350T4G Quick Information

Product Type: Bipolar Transistor
Series: MJD350
Canonical Name: PNP Bipolar Transistor
Subcategory: BJT

NJVMJD350T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NJVMJD350T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJVMJD350T4G Features

  • 300V collector-emitter voltage rating.
  • 0.5A continuous collector current.
  • 15W maximum power dissipation.
  • Surface mount DPAK package.
  • Pb-Free and Halogen Free.

NJVMJD350T4G Applications

  • Used in high-voltage switching circuits
  • Suitable for power regulation applications
  • Ideal for amplification in high-voltage environments
  • Designed for surface-mount assembly

NJVMJD350T4G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the NJVMJD350T4G?

The maximum collector-emitter voltage is 300V.

What package type is used for the NJVMJD350T4G?

It is packaged in a DPAK surface-mount package.

What is the operating temperature range of the NJVMJD350T4G?

-65°C to +150°C.

Is the NJVMJD350T4G RoHS compliant?

Yes, it is RoHS3 compliant.

Is the NJVMJD350T4G Pb-Free?

Yes, it is Pb-Free.

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