| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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154 pcs
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154 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NJVMJD32CT4G-VF01 is a PNP bipolar junction transistor (BJT) designed for general purpose amplifier and low speed switching applications. It features a collector-emitter voltage of up to 100V and a continuous collector current of 3A.
This transistor is housed in a DPAK (TO-252-3) surface mount package, making it suitable for space-constrained designs. It offers a power dissipation of 1.56W at 25°C ambient temperature and operates within a junction temperature range of -65°C to 150°C.
Key electrical characteristics include a DC current gain (hFE) of 10 minimum at 3A and 4V, and a Vce saturation of 1.2V maximum at 375mA and 3A. The device has a bandwidth frequency of 3MHz.
It is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJD31C, MJD32C series is 100 Vdc.
The continuous collector current (IC) is rated at 3 Adc.
The operating and storage junction temperature range is -65°C to +150°C.
This transistor is supplied in a DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63) package.
The DC current gain (hFE) is a minimum of 10 at 3A and 4V.