NJVMJD31CT4G The ON Semiconductor NJVMJD31CT4G is an NPN bipolar junction transistor designed for general purpose amplifier and switching applications. It features a 100V collector-emitter voltage and 3A continuous collector current.
Mfr Part #:

NJVMJD31CT4G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NJVMJD31CT4G is an NPN bipolar junction transistor designed for general purpose amplifier and switching applications. It features a 100V collector-emitter voltage and 3A continuous collector current.
Total Stock: 41,256 pcs
$ Price Range: $0.99

NJVMJD31CT4G Available from 5 distributors

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Non-Authorised

NJVMJD31CT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Continuous
Collector Current - Peak
Collector Cutoff Current
Collector-Emitter Sustaining Voltage
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Frequency
Lead Temperature for Soldering Purposes
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
PD (Maximum @ Tc=25 °C)
Pd (Maximum @ Ta=25 °C)
Power
Supplier Device Package
Tape & Reel
Tape and Reel
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NJVMJD31CT4G Description

Short technical summary and product information.

The ON Semiconductor NJVMJD31CT4G is a silicon NPN power transistor designed for general purpose amplifier and low-speed switching applications. It offers a collector-emitter voltage of 100V and a continuous collector current of 3A, with a peak current capability of 5A.

 

This transistor is packaged in a TO-252-3, DPAK surface mount package, making it suitable for space-constrained designs. It operates within a junction temperature range of -65°C to +150°C and has a total power dissipation of 1.56W at 25°C ambient temperature.

 

The NJVMJD31CT4G is electrically similar to the popular TIP31 and TIP32 series. It is RoHS compliant and designed for surface mount applications, featuring lead forming for tape and reel packaging.

NJVMJD31CT4G Quick Information

Product Type: Transistor
Canonical Name: NPN Power Transistor
Subcategory: Single

NJVMJD31CT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NJVMJD31CT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJVMJD31CT4G Features

  • NPN power transistor for general applications.
  • 100V collector-emitter voltage rating.
  • 3A continuous collector current.
  • Surface mount DPAK package.
  • RoHS compliant and Pb-Free.

NJVMJD31CT4G Applications

  • Used in power switching circuits
  • Suitable for motor control applications
  • Ideal for high-voltage amplification
  • Applicable in power regulation modules

NJVMJD31CT4G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NJVMJD31CT4G?

The maximum collector-emitter voltage (Vceo) for the NJVMJD31CT4G is 100 Vdc.

What is the continuous collector current rating?

The continuous collector current (Ic) for the NJVMJD31CT4G is 3 A.

What is the operating temperature range?

The operating and storage junction temperature range is -65°C to +150°C.

What type of package is the NJVMJD31CT4G in?

The NJVMJD31CT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is this transistor RoHS compliant?

Yes, the NJVMJD31CT4G is RoHS3 Compliant.

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