NJVMJD253T4G-VF01 The On Semiconductor NJVMJD253T4G-VF01 is a PNP bipolar junction transistor designed for surface mount applications. It features a 100V collector-emitter voltage and a continuous collector current of 4A.
Mfr Part #:

NJVMJD253T4G-VF01

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NJVMJD253T4G-VF01 is a PNP bipolar junction transistor designed for surface mount applications. It features a 100V collector-emitter voltage and a continuous collector current of 4A.
Total Stock: 10,000 pcs
$ Price Range: $0.99

NJVMJD253T4G-VF01 Available from 1 distributor

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Non-Authorised
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10,000 pcs
10000 pcs On Request 1 On Request On Request 21+ On Request On Request

NJVMJD253T4G-VF01 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current Gain (Minimum @ IC = 1.0 Adc, VCE = 1.0 Vdc)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Leakage Current (Maximum @ VBE = 7.0 Vdc, IC = 0)
Leakage Current (Maximum @ VCB = 100 Vdc, IE = 0)
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
voltage (Minimum @ IC = 10 mAdc, IB = 0)

NJVMJD253T4G-VF01 Description

Short technical summary and product information.

The NJVMJD253T4G-VF01 from On Semiconductor is a PNP silicon power transistor designed for low voltage, low power, and high-gain audio amplifier applications. It offers a high DC current gain and a high current-gain-bandwidth product.

 

Key electrical specifications include a collector-emitter voltage of 100V, a continuous collector current of 4A, and a peak collector current of 8A. The device has a maximum power dissipation of 12.5W at 25°C case temperature and a transition frequency of 40MHz. The saturation voltage is specified at a maximum of 600mV at 1A collector current and 100mA base current.

 

This transistor is housed in a DPAK surface mount package (TO-252-3, DPak (2 Leads + Tab), SC-63), making it suitable for automated assembly processes. The operating temperature range is -65°C to 150°C.

 

The NJVMJD253T4G-VF01 is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and other applications requiring unique site and control change requirements. It is also Pb-Free and Halogen Free.

NJVMJD253T4G-VF01 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: Automotive, AEC-Q101
Canonical Name: NJVMJD253T4G-VF01 PNP Power Transistor
Subcategory: Bipolar (BJT) - Single

NJVMJD253T4G-VF01 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NJVMJD253T4G-VF01 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJVMJD253T4G-VF01 Features

  • PNP silicon power transistor.
  • 100V collector-emitter voltage.
  • 4A continuous collector current.
  • 12.5W maximum power dissipation.
  • DPAK surface mount package.

NJVMJD253T4G-VF01 Applications

  • Designed for audio amplifier applications.
  • Suitable for low voltage circuits.
  • High-gain applications.
  • Automotive and unique site requirements.

NJVMJD253T4G-VF01 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NJVMJD253T4G-VF01?

The maximum collector-emitter voltage is 100 Vdc.

What is the continuous collector current rating?

The continuous collector current is 4 A.

What is the maximum power dissipation?

The maximum power dissipation is 12.5 W at 25°C case temperature.

What is the operating temperature range?

The operating temperature range is -65°C to 150°C.

What is the minimum DC current gain (hFE)?

The minimum DC current gain is 40 at 200mA collector current and 1V Vce.

What is the saturation voltage at 1A collector current?

The Vce saturation is a maximum of 600mV at 100mA base current and 1A collector current.

What type of package is the NJVMJD253T4G-VF01 in?

The transistor is in a DPAK surface mount package, specified as TO-252-3, DPak (2 Leads + Tab), SC-63.

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