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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current Gain (Minimum @ IC = 1.0 Adc, VCE = 1.0 Vdc) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Leakage Current (Maximum @ VBE = 7.0 Vdc, IC = 0) | |
| Leakage Current (Maximum @ VCB = 100 Vdc, IE = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| voltage (Minimum @ IC = 10 mAdc, IB = 0) |
The NJVMJD253T4G-VF01 from On Semiconductor is a PNP silicon power transistor designed for low voltage, low power, and high-gain audio amplifier applications. It offers a high DC current gain and a high current-gain-bandwidth product.
Key electrical specifications include a collector-emitter voltage of 100V, a continuous collector current of 4A, and a peak collector current of 8A. The device has a maximum power dissipation of 12.5W at 25°C case temperature and a transition frequency of 40MHz. The saturation voltage is specified at a maximum of 600mV at 1A collector current and 100mA base current.
This transistor is housed in a DPAK surface mount package (TO-252-3, DPak (2 Leads + Tab), SC-63), making it suitable for automated assembly processes. The operating temperature range is -65°C to 150°C.
The NJVMJD253T4G-VF01 is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and other applications requiring unique site and control change requirements. It is also Pb-Free and Halogen Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 100 Vdc.
The continuous collector current is 4 A.
The maximum power dissipation is 12.5 W at 25°C case temperature.
The operating temperature range is -65°C to 150°C.
The minimum DC current gain is 40 at 200mA collector current and 1V Vce.
The Vce saturation is a maximum of 600mV at 100mA base current and 1A collector current.
The transistor is in a DPAK surface mount package, specified as TO-252-3, DPak (2 Leads + Tab), SC-63.