NJVMJD253T4G The ON Semiconductor NJVMJD253T4G is a PNP bipolar junction transistor designed for surface mount applications. It offers a 100V collector-emitter voltage and 4A continuous current.
Mfr Part #:

NJVMJD253T4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NJVMJD253T4G is a PNP bipolar junction transistor designed for surface mount applications. It offers a 100V collector-emitter voltage and 4A continuous current.
Total Stock: 2,662 pcs
$ Price Range: $0.99

NJVMJD253T4G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,662 pcs
2662 pcs On Request 1 On Request On Request 1511+ On Request On Request

NJVMJD253T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Continuous
Collector Current - Peak
Collector-Emitter Sustaining Voltage
Collector-Emitter Voltage
Current
Current Cutoff (Maximum @ VBE = 7.0 Vdc, IC = 0)
Current Cutoff (Maximum @ VCB = 100 Vdc, IE = 0)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Vce Saturation (Max) @ Ib, Ic
Voltage

NJVMJD253T4G Description

Short technical summary and product information.

The ON Semiconductor NJVMJD253T4G is a PNP bipolar junction transistor (BJT) suitable for surface mount applications. It is designed for low voltage, low power, and high-gain audio amplifier applications.

 

Key electrical specifications include a maximum collector-emitter voltage of 100V and a continuous collector current of 4A. The device features a high DC current gain (hFE) of 40 at 200mA and 1V, with a saturation voltage (Vce) of 600mV at 100mA and 1A. Its frequency response reaches up to 40MHz.

 

The transistor is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. It operates within a junction temperature range of -65°C to 150°C. The device is RoHS compliant and halogen-free.

 

This component is ideal for use in various amplification and switching circuits where a compact, surface-mountable PNP transistor is required.

NJVMJD253T4G Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: PNP Bipolar Junction Transistor
Subcategory: PNP

NJVMJD253T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NJVMJD253T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJVMJD253T4G Features

  • 100V collector-emitter voltage rating.
  • 4A continuous collector current capability.
  • High DC current gain (hFE) of 40.
  • Surface mount DPAK package.
  • Designed for audio amplifier applications.

NJVMJD253T4G Applications

  • Suitable for audio amplifier circuits.
  • Used in low-power amplification stages.
  • Applicable for general switching tasks.
  • Ideal for compact electronic designs.

NJVMJD253T4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NJVMJD253T4G?

The maximum collector-emitter voltage is 100 Vdc.

What is the continuous collector current rating?

The continuous collector current is 4 A.

What is the operating temperature range?

The operating temperature range is -65°C to 150°C.

What package type is the NJVMJD253T4G supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the NJVMJD253T4G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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