| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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26,143 pcs
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26143 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor NJVMJD122T4G is a high-performance NPN Darlington transistor housed in a TO-252 surface-mount package. This component is rated for a maximum continuous collector current (Ic) of 8A and a maximum collector-emitter voltage (Vceo) of 100V. It offers a minimum DC current gain (hFE) of 100 and a maximum power dissipation (Pd) of 20W.
Designed for reliability, the NJVMJD122T4G operates within a temperature range of -65°C to 150°C. Its surface-mount TO-252 package is suitable for automated assembly processes. The transistor is also qualified to the AEC-Q101 automotive standard, indicating its suitability for demanding automotive applications.
Key electrical characteristics include a maximum collector-emitter saturation voltage (VceSAT) of 2V and a maximum emitter-base voltage (VEBO) of 5V. The maximum collector cut-off current (ICEO) is 10μA. This device is part of the MJD122 series.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current (Ic) is 8A.
The maximum collector-emitter voltage (Vceo) is 100V.
The NJVMJD122T4G is available in a TO-252 package.
The minimum DC current gain (hFE) is 100.
The operating temperature range is from -65°C to 150°C.
Yes, the NJVMJD122T4G is qualified to the AEC-Q101 automotive standard.