NJVMJD117T4G The On Semiconductor NJVMJD117T4G is a PNP Darlington power transistor designed for general purpose power and switching applications. It features a 100V collector-emitter breakdown voltage and a 2A continuous collector current.
Mfr Part #:

NJVMJD117T4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NJVMJD117T4G is a PNP Darlington power transistor designed for general purpose power and switching applications. It features a 100V collector-emitter breakdown voltage and a 2A continuous collector current.
Total Stock: 20,000 pcs
$ Price Range: $0.99

NJVMJD117T4G Available from 1 distributor

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NJVMJD117T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current
Collector Current - Continuous
Collector Current - Peak
Collector Cutoff Current
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Frequency - Transition
Lead Style
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
PD (Maximum @ Tc=25 °C)
Pd (Maximum @ Ta=25 °C)
Pd (Maximum)
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
VCEO(sus) (Minimum @ IC = 30 mAdc, IB = 0)
Vce Saturation (Max) @ Ib, Ic
Voltage

NJVMJD117T4G Description

Short technical summary and product information.

The On Semiconductor NJVMJD117T4G is a PNP Darlington power transistor suitable for general purpose power and switching applications, including output or driver stages in switching regulators, converters, and power amplifiers.

 

This device offers a collector-emitter breakdown voltage of 100V and a continuous collector current of 2A. It has a maximum power dissipation of 1.75W at 25°C ambient temperature and a junction-to-case thermal resistance of 6.25°C/W. The operating temperature range is from -65°C to 150°C.

 

Packaged in a DPAK surface mount package (TO-252-3), the NJVMJD117T4G is designed for ease of mounting on PCBs. It is electrically similar to the popular TIP31 and TIP32 series and is RoHS compliant.

 

Key electrical characteristics include a Vce(sat) of 3V at 40mA/4A and a DC current gain (hFE) of 1000 minimum at 2A/3V. The transition frequency is 25MHz.

NJVMJD117T4G Quick Information

Product Type: Bipolar Transistor
Canonical Name: PNP Darlington Power Transistor
Subcategory: PNP Darlington

NJVMJD117T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NJVMJD117T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJVMJD117T4G Features

  • PNP Darlington power transistor.
  • 100V collector-emitter breakdown voltage.
  • 2A continuous collector current.
  • 1.75W maximum power dissipation.
  • DPAK surface mount package.

NJVMJD117T4G Applications

  • Used in switching regulators.
  • Suitable for power converters.
  • Applicable for power amplifiers.
  • General purpose power switching.

NJVMJD117T4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the NJVMJD117T4G?

The collector-emitter breakdown voltage is 100 Vdc.

What is the continuous collector current rating for the NJVMJD117T4G?

The continuous collector current is 2 Adc.

What is the maximum power dissipation of the NJVMJD117T4G at 25°C ambient?

The maximum power dissipation at 25°C ambient is 1.75 W.

What is the operating temperature range for the NJVMJD117T4G?

The operating temperature range is -65°C to 150°C.

What package type is the NJVMJD117T4G supplied in?

The NJVMJD117T4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the NJVMJD117T4G RoHS compliant?

Yes, the NJVMJD117T4G is RoHS3 Compliant.

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