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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,850 pcs
|
7850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current - Continuous | |
| Collector Current - Peak | |
| Collector Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation (@ TA = 25 °C) | |
| Total Power Dissipation @ TC=+25°C | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor NJVMJD112G is a silicon NPN Darlington power transistor suitable for general purpose power and switching applications, including output or driver stages in switching regulators, converters, and power amplifiers.
This device features a maximum collector-emitter voltage of 100V and a continuous collector current of 2A. It has a peak collector current of 4A and a base current of 50mAdc. The total power dissipation is rated at 1.75W at 25°C ambient temperature.
The transistor is housed in a DPAK surface mount package, specifically TO-252-3, DPak (2 Leads + Tab), SC-63. It operates within a junction temperature range of -65°C to +150°C. The device is electrically similar to the TIP31 and TIP32 series.
Key electrical characteristics include a DC current gain (hFE) of 1000 minimum at 2A collector current and 3V Vce, and a Vce saturation of 3V maximum at 40mA base current and 4A collector current. It operates at a frequency of 25MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the NJVMJD112G is 100 Vdc.
The continuous collector current (Ic) for the NJVMJD112G is 2 Adc.
The total power dissipation (Pd) for the NJVMJD112G at 25°C ambient temperature is 1.75 W.
The operating and storage junction temperature range for the NJVMJD112G is -65°C to +150°C.
The NJVMJD112G is supplied in a DPAK package, also known as TO-252-3, DPak (2 Leads + Tab), SC-63.
Yes, the NJVMJD112G is RoHS3 Compliant.