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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,420 pcs
|
31420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
270 pcs
|
270 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Collector - Emitter Saturation Voltage | |
| Collector Cutoff Current | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| ESD Ratings - Human Body Model | |
| ESD Ratings - Machine Model | |
| Emitter Cutoff Current | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| current (Maximum @ Peak) |
The ON Semiconductor NJVMJB44H11T4G is a complementary NPN power transistor suitable for general purpose power amplification and switching applications. It is designed for use in switching regulators, converters, and power amplifiers.
Key electrical specifications include a maximum collector-emitter voltage of 80V and a continuous collector current of 10A. The transistor offers a low collector-emitter saturation voltage of 1.0V (Max) at 8.0A and a DC current gain (hFE) of 40 (Min) at 4A, 1V. It operates with a gain bandwidth product of 50MHz.
This device is housed in a D2PAK surface mount package, making it suitable for automated assembly processes. The operating temperature range is from -55°C to 150°C. It also features ESD protection with ratings of >8000V for the Human Body Model and >400V for the Machine Model.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NJVMJB44H11T4G is 80 Vdc.
The continuous collector current (IC) for this transistor is 10 Adc.
The maximum power dissipation (PD) is 50 W at TC = 25°C.
The operating and storage junction temperature range is -55°C to 150°C.
This transistor is supplied in a D2PAK surface mount package.
The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.0 Vdc at 8.0 A.
Yes, the RoHS status is RoHS3 Compliant.