NJVMJB44H11T4G The ON Semiconductor NJVMJB44H11T4G is an NPN bipolar power transistor designed for general purpose amplification and switching applications. It features an 80V collector-emitter voltage and 10A continuous current.
Mfr Part #:

NJVMJB44H11T4G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NJVMJB44H11T4G is an NPN bipolar power transistor designed for general purpose amplification and switching applications. It features an 80V collector-emitter voltage and 10A continuous current.
Total Stock: 37,690 pcs
$ Price Range: $0.99

NJVMJB44H11T4G Available from 3 distributors

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31,420 pcs
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NJVMJB44H11T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Collector - Emitter Saturation Voltage
Collector Cutoff Current
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Ratings - Human Body Model
ESD Ratings - Machine Model
Emitter Cutoff Current
Frequency
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Supplier Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ Peak)

NJVMJB44H11T4G Description

Short technical summary and product information.

The ON Semiconductor NJVMJB44H11T4G is a complementary NPN power transistor suitable for general purpose power amplification and switching applications. It is designed for use in switching regulators, converters, and power amplifiers.

 

Key electrical specifications include a maximum collector-emitter voltage of 80V and a continuous collector current of 10A. The transistor offers a low collector-emitter saturation voltage of 1.0V (Max) at 8.0A and a DC current gain (hFE) of 40 (Min) at 4A, 1V. It operates with a gain bandwidth product of 50MHz.

 

This device is housed in a D2PAK surface mount package, making it suitable for automated assembly processes. The operating temperature range is from -55°C to 150°C. It also features ESD protection with ratings of >8000V for the Human Body Model and >400V for the Machine Model.

NJVMJB44H11T4G Quick Information

Product Type: Bipolar Transistor
Canonical Name: NPN Power Transistor
Subcategory: Single

NJVMJB44H11T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NJVMJB44H11T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJVMJB44H11T4G Features

  • NPN bipolar power transistor.
  • 80V collector-emitter voltage rating.
  • 10A continuous collector current.
  • 50W maximum power dissipation.
  • D2PAK surface mount package.

NJVMJB44H11T4G Applications

  • General purpose power amplification.
  • Switching regulator applications.
  • Power converter circuits.
  • Output driver stages.

NJVMJB44H11T4G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NJVMJB44H11T4G?

The maximum collector-emitter voltage (VCEO) for the NJVMJB44H11T4G is 80 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) for this transistor is 10 Adc.

What is the maximum power dissipation?

The maximum power dissipation (PD) is 50 W at TC = 25°C.

What is the operating temperature range?

The operating and storage junction temperature range is -55°C to 150°C.

What type of package is the NJVMJB44H11T4G in?

This transistor is supplied in a D2PAK surface mount package.

What is the collector-emitter saturation voltage?

The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.0 Vdc at 8.0 A.

Does this transistor meet RoHS standards?

Yes, the RoHS status is RoHS3 Compliant.

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