| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,800 pcs
|
8800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,764 pcs
|
2764 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vce Saturation (Max) @ Ib, Ic | |
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The NJVMJB42CT4G from ON Semiconductor is a PNP silicon power transistor designed for surface mount applications. It is housed in a D2PAK package, offering electrical characteristics similar to the TIP41 and TIP42 series.
Key electrical specifications include a maximum collector-emitter voltage of 100V and a continuous collector current of 6A. The transistor can handle peak currents up to 10A and has a maximum power dissipation of 65W at 25°C case temperature or 2W at 25°C ambient temperature. It operates within a junction temperature range of -65°C to 150°C.
This device is suitable for various power switching and amplification applications where a robust PNP transistor in a surface mount package is required. The D2PAK (TO-263AB) package facilitates automated assembly processes.
Additional features include a DC current gain (hFE) of at least 15 at 3A/4V and a Vce saturation of 1.5V maximum at 600mA/6A. The transistor has a frequency rating of 3MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the NJVMJB42CT4G is 100V.
The continuous collector current (Ic) rating for the NJVMJB42CT4G is 6A.
The total power dissipation (Pd) at 25°C ambient temperature for the NJVMJB42CT4G is 2W.
The operating and storage junction temperature range for the NJVMJB42CT4G is -65°C to 150°C.
The NJVMJB42CT4G is supplied in a D2PAK (TO-263AB) surface mount package.