| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NJV4030PT3G is a PNP silicon bipolar power transistor. It is designed for surface mount applications and comes in a SOT-223 (TO-261) package.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 3A. The device can handle a peak collector current (ICM) of 5A and a continuous base current (IB) of 1A. Its power dissipation is rated at 2W at 25°C ambient temperature when mounted on a 1" sq. collector pad.
This transistor operates over a wide temperature range from -55°C to +150°C. It meets UL 94, V-0 flammability standards and is Pb-free, Halogen-free/BFR-free, and RoHS compliant. The NJV prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
With a frequency rating of 160MHz and a DC current gain (hFE) of 200 at 1A and 1V, the NJV4030PT3G is suitable for various general-purpose amplification and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
The continuous collector current (IC) is 3 Adc.
The power dissipation (PD) is 2 W at 25°C ambient temperature when mounted on a 1" sq. collector pad.
The operating junction temperature range is -55°C to +150°C.
The device is supplied in a SOT-223 (TO-261) package.
Yes, the device is RoHS3 compliant.