| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,580 pcs
|
2580 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
268 pcs
|
268 pcs | On Request | 1 | On Request | On Request | 1706+ | On Request | On Request |
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The NJV4030PT1G is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for switching and amplification in electronic circuits, with a maximum collector-emitter voltage of 40V and a collector current of 3A. The device features a maximum emitter-base voltage of 6V and a maximum base current of 1A. Its package type is SOT223, suitable for surface-mount applications. The transistor has a collector cutoff current of 100 nA at VCB = 40V and an emitter cutoff current of 100 nA at VBE = 6V. It exhibits a collector-emitter saturation voltage of 0.5V at IC = 3A, IB = 0.3A, and a DC current gain (hFE) of at least 200 at Ic = 1A. The device's power dissipation is rated at 2W, with junction-to-case thermal resistance of 11°C/W and junction-to-ambient thermal resistance of 64°C/W. It is suitable for use in power switching, motor control, and other high-current applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 40V.
The maximum collector current is 3A.
It comes in a SOT223 surface-mount package.
The maximum emitter-base voltage is 6V.