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NJT4030PT3G The ON Semiconductor NJT4030PT3G is a PNP silicon bipolar power transistor designed for various applications. It features a 40V collector-emitter voltage and a continuous collector current of 3A.
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NJT4030PT3G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NJT4030PT3G is a PNP silicon bipolar power transistor designed for various applications. It features a 40V collector-emitter voltage and a continuous collector current of 3A.
✓ Total Stock: 99,405 pcs
$ Price Range: $0.99

NJT4030PT3G Available from 3 distributors

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Flip Electronics ✓
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94,000 pcs
On Request
94000 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
4,260 pcs
$0.44 ℹ
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0+ 0.44
4260 pcs $0.44
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1 On Request On Request On Request On Request On Request
Xingangxin ✓
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1,145 pcs
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1145 pcs On Request 1 On Request On Request On Request On Request On Request
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NJT4030PT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NJT4030PT3G Description

Short technical summary and product information.

The ON Semiconductor NJT4030PT3G is a PNP silicon bipolar power transistor. It is rated for a maximum collector-emitter voltage of 40V and a continuous collector current of 3A. The device offers a power dissipation of 2W and operates within a temperature range of -55°C to 150°C.

 

This transistor is housed in a SOT-223 surface-mount package, making it suitable for compact electronic designs. It features a gain bandwidth product of 160MHz and a minimum DC current gain (hFE) of 200 at 1A and 1V. The saturation voltage (Vce Sat) is a maximum of 500mV at 300mA and 3A.

 

The NJT4030PT3G is AEC-Q101 qualified, indicating its suitability for automotive applications. It is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, meeting environmental standards for modern electronics manufacturing.

NJT4030PT3G Quick Information

Product Type: Bipolar Transistor
Series: NJT4030P
Canonical Name: PNP Silicon Bipolar Power Transistor
Subcategory: PNP

NJT4030PT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NJT4030PT3G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJT4030PT3G Features

  • PNP silicon bipolar power transistor.
  • 40V collector-emitter voltage rating.
  • 3A continuous collector current.
  • 2W power dissipation.
  • SOT-223 surface-mount package.

NJT4030PT3G Applications

  • Suitable for high-current switching applications.
  • Ideal for power regulation in consumer electronics.
  • Used in motor control and inverter circuits.
  • Applicable in automotive power management systems.
  • Suitable for low-voltage, high-speed switching.

NJT4030PT3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NJT4030PT3G?

The maximum collector-emitter voltage (VCEO) for the NJT4030PT3G is 40 Vdc.

What is the continuous collector current rating of the NJT4030PT3G?

The continuous collector current (IC) for the NJT4030PT3G is 3 A.

What is the power dissipation of the NJT4030PT3G?

The power dissipation (PD) of the NJT4030PT3G is 2 W at TA = 25°C (Note 1).

What is the operating temperature range for this transistor?

The operating junction temperature range (TJ, Tstg) for the NJT4030PT3G is -55°C to +150°C.

What package type is the NJT4030PT3G supplied in?

The NJT4030PT3G is supplied in a SOT-223 package.

Is the NJT4030PT3G RoHS compliant?

Yes, the NJT4030PT3G is RoHS3 Compliant.

What is the gain bandwidth product of the NJT4030PT3G?

The gain bandwidth product (fT) of the NJT4030PT3G is 160 MHz.

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