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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,520 pcs
|
13520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,505 pcs
|
2505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current - Continuous | |
| Collector Current - Peak | |
| Collector-Base Breakdown Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| ICEO (Maximum @ VCE = 200 V, TC = 125 °C) | |
| ICEO (Maximum @ VCE = 250 V) | |
| ICES (Maximum @ VCE = 500 V) | |
| ICES (Maximum @ VCE = 500 V, TC = 125 °C) | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| PD (@ TC = 25 °C) | |
| PD (Unspecified condition) | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor NJD35N04T4G is a high voltage NPN Darlington power transistor specifically designed for inductive applications such as electronic ignition, switching regulators, and motor control. It features an exceptional safe operating area, high VCE, and high current gain.
Key electrical specifications include a collector-emitter sustaining voltage (VCEO) of 350 Vdc, a collector-base breakdown voltage (VCBO) of 700 Vdc, and a collector-emitter breakdown voltage (VCES) of 700 Vdc. The continuous collector current (IC) is rated at 4.0 Adc, with a peak current (ICM) of 8.0 Adc. The base current (IB) is 0.5 Adc. Total power dissipation (PD) is 45 W at TC = 25°C, with a derating of 0.36 W/°C above 25°C.
This device operates within a junction temperature range of -65°C to +150°C. The thermal resistance from junction-to-case (Rth(j-c)) is 2.78 °C/W, and junction-to-ambient (Rth(j-a)) is 71.4 °C/W.
The NJD35N04T4G is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. The supplier device package is DPAK.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO) is 350 Vdc.
The continuous collector current (IC) is 4.0 Adc.
The maximum power dissipation (PD) is 45 W at TC = 25°C.
The operating and storage junction temperature range is -65°C to +150°C.
The device is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.