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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,020 pcs
|
36020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,550 pcs
|
12550 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,312 pcs
|
1312 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Leakage Current (Maximum @ VBE = 5 Vdc, IC = 0) | |
| Leakage Current (Maximum @ VCB = -50 Vdc, IE = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Nominal @ TC=25 °C) | |
| Power Dissipation (Nominal @ Ta = 25 °C) | |
| Saturation Voltage (Maximum @ IC = 1 A, IB = 0.05 Adc) | |
| Supplier Device Package | |
| Thermal Resistance (Maximum @ Note 1) | |
| Thermal Resistance (Maximum) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| current (Nominal @ IB) | |
| current (Nominal @ ICM) | |
| gain (Minimum @ IC = 0.75 Adc, VCE = 1.6 Vdc, −40 °C ≤ TJ ≤ 150 °C) | |
| gain (Minimum @ IC = 2 Adc, VCE = 2 Vdc) | |
| voltage (Maximum @ IC = 1 Adc, VCE = 2 Vdc) | |
| voltage (Minimum @ VCEO(sus) | |
| voltage (Nominal @ VCB) | |
| voltage (Nominal @ VEB) |
The ON Semiconductor NJD2873T4G is an NPN silicon power transistor suitable for surface mount applications, specifically designed for high-gain audio amplifier circuits. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 2A.
Key electrical characteristics include a low collector-emitter saturation voltage of 300mV at 50mA/1A and a high DC current gain (hFE) of 120 minimum at 500mA/2V. The transistor operates over a wide temperature range from -65°C to 175°C.
Packaged in a DPAK (TO-252-3) surface mount package, the NJD2873T4G is designed for efficient thermal management with a junction-to-case thermal resistance of 10°C/W. It is Pb-free and Halogen-free, complying with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NJD2873T4G is 50 Vdc.
The continuous collector current (IC) for the NJD2873T4G is 2 Adc.
The operating and storage junction temperature range for the NJD2873T4G is -65°C to +175°C.
The NJD2873T4G is supplied in a DPAK (TO-252-3, DPak) surface mount package.
Yes, the NJD2873T4G is RoHS3 Compliant.
The DC current gain (hFE) is a minimum of 120 at 500mA/2V, and a minimum of 40 at 2A/2V.
The collector-emitter saturation voltage (Vce Sat) is a maximum of 300mV at 50mA/1A.