NJD2873T4G The ON Semiconductor NJD2873T4G is an NPN silicon power transistor designed for high-gain audio amplifier applications. It offers a 50V collector-emitter voltage and 2A continuous current.
Mfr Part #:

NJD2873T4G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NJD2873T4G is an NPN silicon power transistor designed for high-gain audio amplifier applications. It offers a 50V collector-emitter voltage and 2A continuous current.
Total Stock: 52,502 pcs
$ Price Range: $0.99

NJD2873T4G Available from 6 distributors

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NJD2873T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Leakage Current (Maximum @ VBE = 5 Vdc, IC = 0)
Leakage Current (Maximum @ VCB = -50 Vdc, IE = 0)
Mounting Type
Operating Temperature
Power
Power Dissipation (Nominal @ TC=25 °C)
Power Dissipation (Nominal @ Ta = 25 °C)
Saturation Voltage (Maximum @ IC = 1 A, IB = 0.05 Adc)
Supplier Device Package
Thermal Resistance (Maximum @ Note 1)
Thermal Resistance (Maximum)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Nominal @ IB)
current (Nominal @ ICM)
gain (Minimum @ IC = 0.75 Adc, VCE = 1.6 Vdc, −40 °C ≤ TJ ≤ 150 °C)
gain (Minimum @ IC = 2 Adc, VCE = 2 Vdc)
voltage (Maximum @ IC = 1 Adc, VCE = 2 Vdc)
voltage (Minimum @ VCEO(sus)
voltage (Nominal @ VCB)
voltage (Nominal @ VEB)

NJD2873T4G Description

Short technical summary and product information.

The ON Semiconductor NJD2873T4G is an NPN silicon power transistor suitable for surface mount applications, specifically designed for high-gain audio amplifier circuits. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 2A.

 

Key electrical characteristics include a low collector-emitter saturation voltage of 300mV at 50mA/1A and a high DC current gain (hFE) of 120 minimum at 500mA/2V. The transistor operates over a wide temperature range from -65°C to 175°C.

 

Packaged in a DPAK (TO-252-3) surface mount package, the NJD2873T4G is designed for efficient thermal management with a junction-to-case thermal resistance of 10°C/W. It is Pb-free and Halogen-free, complying with RoHS standards.

NJD2873T4G Quick Information

Product Type: NPN Transistor
Canonical Name: NPN Silicon Power Transistor
Subcategory: Single

NJD2873T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NJD2873T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJD2873T4G Features

  • NPN silicon power transistor for audio amplifiers.
  • 50V collector-emitter voltage rating.
  • 2A continuous collector current.
  • DPAK surface mount package.
  • Pb-free and Halogen-free.

NJD2873T4G Applications

  • Suitable for high-gain audio amplifier circuits.
  • Ideal for switching power supplies.
  • Used in automotive electronic control units.
  • Applicable in high-frequency switching applications.
  • Suitable for general-purpose amplification tasks.

NJD2873T4G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NJD2873T4G?

The maximum collector-emitter voltage (VCEO) for the NJD2873T4G is 50 Vdc.

What is the continuous collector current rating of the NJD2873T4G?

The continuous collector current (IC) for the NJD2873T4G is 2 Adc.

What is the operating temperature range for this transistor?

The operating and storage junction temperature range for the NJD2873T4G is -65°C to +175°C.

What type of package is the NJD2873T4G supplied in?

The NJD2873T4G is supplied in a DPAK (TO-252-3, DPak) surface mount package.

Is the NJD2873T4G RoHS compliant?

Yes, the NJD2873T4G is RoHS3 Compliant.

What is the DC current gain (hFE) of the NJD2873T4G?

The DC current gain (hFE) is a minimum of 120 at 500mA/2V, and a minimum of 40 at 2A/2V.

What is the collector-emitter saturation voltage (Vce Sat) for the NJD2873T4G?

The collector-emitter saturation voltage (Vce Sat) is a maximum of 300mV at 50mA/1A.

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