NJD1718T4G The ON Semiconductor NJD1718T4G is a PNP silicon power transistor in a DPAK surface mount package. It is designed for high-gain audio amplifier and power switching applications.
Mfr Part #:

NJD1718T4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NJD1718T4G is a PNP silicon power transistor in a DPAK surface mount package. It is designed for high-gain audio amplifier and power switching applications.
Total Stock: 2,500 pcs
$ Price Range: $0.99

NJD1718T4G Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

NJD1718T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current
Collector-Emitter Breakdown Voltage
Current
Current (Maximum)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Tape & Reel
Thermal Resistance (Maximum @ Junction to case)
Thermal Resistance (Maximum @ Junction-to-Ambient)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NJD1718T4G Description

Short technical summary and product information.

The NJD1718T4G from ON Semiconductor is a PNP silicon power transistor suitable for surface mounting. It is engineered for applications requiring high-gain audio amplification and efficient power switching.

 

This device features a maximum collector-emitter voltage of -50V and a continuous collector current of 2A. It offers a low collector-emitter saturation voltage and high switching speed, making it suitable for demanding applications. The transistor is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting.

 

Key electrical characteristics include a DC current gain (hFE) of 70 minimum at 500mA and 2V, and a Vce saturation of 500mV maximum at 50mA and 1A. The operating frequency reaches up to 80MHz. The device operates within a junction temperature range of -65°C to 150°C.

 

Environmental compliance includes Pb-Free and Halogen Free status, indicated by the 'G' in the part number and confirmed in the datasheet. The epoxy meets UL 94 V-0 standards. The NJD1718T4G is supplied in tape and reel packaging, with a standard quantity of 2500 units.

NJD1718T4G Quick Information

Product Type: Power Transistor
Canonical Name: NJD1718T4G PNP Silicon DPAK Power Transistor
Subcategory: Single

NJD1718T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NJD1718T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NJD1718T4G Features

  • PNP silicon power transistor.
  • Designed for audio amplifier applications.
  • Suitable for power switching applications.
  • Surface mount DPAK package.
  • Pb-Free and Halogen Free.

NJD1718T4G Applications

  • Suitable for high-gain audio amplifier circuits.
  • Used in power switching applications.
  • Ideal for automotive electronic control units.
  • Applicable in high-speed switching circuits.

NJD1718T4G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NJD1718T4G?

-50 Vdc

What is the continuous collector current rating?

-2 A

What is the operating temperature range?

-65°C ~ 150°C

What package type is the NJD1718T4G supplied in?

TO-252-3, DPak (2 Leads + Tab), SC-63

Is the NJD1718T4G RoHS compliant?

RoHS3 Compliant

Is the NJD1718T4G Pb-Free?

Yes

Is the NJD1718T4G Halogen Free?

Yes

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