| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NIF5002NT1G is a single N-Channel self-protected FET from ON Semiconductor, housed in a SOT-223 package. This device is part of an advanced series of power MOSFETs utilizing ON Semiconductor's latest MOSFET technology to achieve low on-resistance while incorporating smart features. It offers a drain-to-source voltage of 42V and a continuous drain current of 2A.
Key protective features include current limitation, thermal shutdown with automatic restart, and short circuit protection. An integrated Drain-to-Gate Clamp provides protection against high energy in avalanche mode and unexpected voltage transients, while an integrated Gate-to-Source Clamp offers Electrostatic Discharge (ESD) protection. The device also features slew rate control for low noise switching and overvoltage clamped protection.
With an operating junction and storage temperature range of -55°C to 150°C, the NIF5002NT1G is suitable for various demanding environments. Its typical Rds On is 165mOhm. The device is designed for surface mount applications and is available in a TO-261-4, TO-261AA package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage for the NIF5002NT1G is 42 V.
The continuous drain current of the NIF5002NT1G is 2A.
The NIF5002NT1G operates within a junction and storage temperature range of -55°C to 150°C.
The typical Rds On of the NIF5002NT1G is 165mOhm.
The NIF5002NT1G offers fault protection including Current Limiting (Fixed), Over Temperature, and Over Voltage.
The NIF5002NT1G is available in TO-261-4, TO-261AA packages.
The NIF5002NT1G is designed for surface mount applications.